In-situ microscale through-silicon via strain measurements by synchrotron x-ray microdiffraction exploring the physics behind data interpretation-Reference-Cited by-同舟云学术

In-situ microscale through-silicon via strain measurements by synchrotron x-ray microdiffraction exploring the physics behind data interpretation

Published:2014-09-15 Issue:11 Volume:105 Page:112109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Xi¹²,Thadesar Paragkumar A.²,Taylor Christine L.¹,Oh Hanju²,Kunz Martin³,Tamura Nobumichi³,Bakir Muhannad S.²,Sitaraman Suresh K.¹

Affiliation:

1. The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

2. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

3. Advanced Light Source, Lawrence Berkeley National Laboratory Berkeley, California 94720, USA

Funder

Semiconductor Research Corporation (SRC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference18 articles.

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4. D. Wolf , V. Simons , V. Cherman , R. Labie , B. Vandevelde , and E. Beyne , in Proceedings of the 62nd IEEE Electronic Components and Technology Conference, San Diego, CA, 29 May–1 June 2012 (IEEE, 2012), pp. 331–337.

5. Micro-Raman spectroscopy and analysis of near-surface stresses in silicon around through-silicon vias for three-dimensional interconnects

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