Seeding atomic layer deposition of high-k dielectric on graphene with ultrathin poly(4-vinylphenol) layer for enhanced device performance and reliability-Reference-Cited by-同舟云学术

Seeding atomic layer deposition of high-k dielectric on graphene with ultrathin poly(4-vinylphenol) layer for enhanced device performance and reliability

Published:2012-07-16 Issue:3 Volume:101 Page:033507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cheol Shin Woo,Yong Kim Taek,Sul Onejae,Jin Cho Byung

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4737645

Reference20 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Graphene transistors

3. Graphene Gate Electrode for MOS Structure-Based Electronic Devices

4. Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene

5. Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wafer‐scale single‐crystal two‐dimensional materials for integrated optoelectronics;InfoScience;2024-08-27

2. Tunable Encapsulation and Doping of Monolayer MoS₂ by In Situ Probing of Excitonic Properties During Atomic Layer Deposition;Advanced Materials Interfaces;2023-04-18

3. Dielectrics for 2-D Electronics: From Device to Circuit Applications;IEEE Transactions on Electron Devices;2023-04

4. ALD-Assisted Graphene Functionalization for Advanced Applications;Journal of Electronic Materials;2022-03-28

5. Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials;Applied Sciences;2021-11-22