Study on the transitional seeded crystallization variation of silicon on insulator using Gaussian laser beams
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336874
Reference13 articles.
1. Zone‐Melting Recrystallization of Si Films with a Moveable‐Strip‐Heater Oven
2. Subgrain boundaries in laterally seeded silicon‐on‐oxide formed by graphite strip heater recrystallization
3. Arc lamp zone melting and recrystallization of Si films on oxidized silicon substrates
4. Cellular growth in micro-zone melted silicon
5. Halogen lamp recrystallization of silicon on insulating substrates
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Artificial Epitaxy (Graphoepitaxy);Oriented Crystallization on Amorphous Substrates;1991
2. Suppression of Grain Boundary Formation During Laser Recrystallization of Thin Si-Films Using Micro Absorbers;Springer Proceedings in Physics;1991
3. Study of subboundary generation in silicon‐on‐insulator films recrystallized by a pseudoline electron beam;Journal of Applied Physics;1990-09-15
4. P-Channel Polycrystalline Silicon Thin-Film Transistors on Glass Substrates;Japanese Journal of Applied Physics;1990-08-20
5. Techniques of optical scanning microscopy;Journal of Physics E: Scientific Instruments;1989-08
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