Hole opening from growing interfacial voids: A possible mechanism of solid state dewetting

Author:

Curiotto Stefano1ORCID,Chame Anna2ORCID,Müller Pierre1ORCID,Thompson Carl V.3,Pierre-Louis Olivier4ORCID

Affiliation:

1. Aix Marseille University, CNRS, CINAM, AMUTECH, Marseille, France

2. Instituto de Física, University Federal Fluminense, Avenida Litorânea s/n, 24210-340 Niterói RJ Brazil

3. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

4. Institut Lumière Matière, UMR 5306 Université Lyon 1-CNRS, Universitè de Lyon, 69622 Villeurbanne, France

Abstract

Vacancies at interfaces between a film and a substrate can affect material properties and could play a role in solid state dewetting. Using kinetic Monte Carlo simulations, we show that interfacial mono-vacancies diffuse and coalesce to form vacancy clusters and voids. The film/substrate excess energy ES, which is related to the apparent contact angle, controls the mechanisms of coalescence. Depending on ES, voids emerging at the film surface form a hole that can be filled by the film or can lead to dewetting of the film from the substrate.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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