Rim nucleation and step-train orientation effects in SOI(111) dewetting-Reference-Cited by-同舟云学术

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Rim nucleation and step-train orientation effects in SOI(111) dewetting

Published:2024-02 Issue: Volume:45 Page:103912
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Curiotto Stefano^ORCID,Müller Pierre,Cheynis Fabien^ORCID,Ozerov Igor^ORCID,Leroy Frédéric

Funder

Agence nationale de la recherche

Publisher

Elsevier BV

Reference34 articles.

1. Metal silicides in CMOS technology: Past, present, and future trends;Zhang;Crit. Rev. Solid State Mater. Sci.,2003

2. Formation of silicon islands on a silicon on insulator substrate upon thermal annealing;Legrand;Appl. Phys. Lett.,2000

3. How to control solid state dewetting: A short review;Leroy;Surf. Sci. Rep.,2016

4. Effect of patterning on thermal agglomeration of ultrathin silicon-on-insulator layer;Ishikawa;Appl. Surf. Sci.,2002

5. Pattern-induced alignment of silicon islands on buried oxide layer of silicon-on-insulator structure;Ishikawa;Appl. Phys. Lett.,2003

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