Growth of uniform epitaxial CoSi2films on Si(111)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341563
Reference40 articles.
1. Geometric structure of the NiSi2Si(111) interface: An X-ray standing-wave analysis
2. Structure determination of theCoSi2:Si(111) interface by x-ray standing-wave analysis
3. Determination of the atomic structure of the epitaxialCoSi2:Si(111) interface using high-resolution Rutherford backscattering
4. Transistor effect in monolithic Si/CoSi2/Si epitaxial structures
5. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
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2. Visualization of the Formation of Interfacially Polymerized Film by an Optical Contact Angle Measuring Device;The Journal of Physical Chemistry C;2012-05-16
3. Titanium Interlayer Mediated Epitaxy of CoSi2 on Si1−xGex;Thin Solid Films;2008-02
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