Determination of the atomic structure of the epitaxialCoSi2:Si(111) interface using high-resolution Rutherford backscattering
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.37.6305/fulltext
Reference24 articles.
1. Specular Boundary Scattering and Electrical Transport in Single-Crystal Thin Films of CoSi2
2. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
3. Direct determination of atomic structure at the epitaxial cobalt disilicide on (111) Si interface by ultrahigh resolution electron microscopy
4. Structure determination of theCoSi2:Si(111) interface by x-ray standing-wave analysis
5. Real-space determination of atomic structure and bond relaxation at theNiSi2-Si(111) interface
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