Kinetics of pulsed ultraviolet laser induced oxidation ofc‐Ge: The role of optical coupling and material losses
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354838
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1. Excimer-Laser-Induced Oxidation of GaN Epilayer;Japanese Journal of Applied Physics;2003-09-15
2. Reflectivity of crystalline Ge and Si at the melting temperature measured in real time with subnanosecond temporal resolution;Journal of Applied Physics;2001-04
3. ZnO thin film deposition by laser ablation of Zn target in oxygen reactive atmosphere;Applied Surface Science;1996-10
4. Pulsed laser deposition of silicon nitride thin films by laser ablation of a Si target in low pressure ammonia;Journal of Materials Science;1996-06
5. All laser‐assisted heteroepitaxial growth of Si0.8Ge0.2 on Si(100): Pulsed laser deposition and laser induced melting solidification;Applied Physics Letters;1996-03-25
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