Excimer-Laser-Induced Oxidation of GaN Epilayer-Reference-Cited by-同舟云学术

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Excimer-Laser-Induced Oxidation of GaN Epilayer

Published:2003-09-15 Issue:Part 1, No. 9A Volume:42 Page:5638-5641
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wang Xin-Cai,Lim Gnian-Cher,Zheng Hong-Yu,Tan Joo-Lett,Liu Wei,Chua Soo-Jin

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=9R/a=5638/pdf

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimized Growth of Gallium Oxide Thin Films Using Different Synthesis Processes;Journal of Electronic Materials;2018-10-30

2. Excimer laser annealing effects on AlGaN/GaN heterostructures;Current Applied Physics;2016-06

3. Atomic layer deposition TiO2–Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-10-15

4. Recent development of gallium oxide thin film on GaN;Materials Science in Semiconductor Processing;2013-10

5. Effect of Oxidation Time on Thermally Grown Oxide on GaN;Journal of Materials Engineering and Performance;2012-11-29

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