Gain characteristics of the InGaAs strained quantum wells with GaAs, AlGaAs, and GaAsP barriers in vertical-external-cavity surface-emitting lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3081974
Reference27 articles.
1. Design and characteristics of high-power (<0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams
2. Extended cavity surface-emitting semiconductor lasers
3. Linearly polarized dual-wavelength vertical-external-cavity surface-emitting laser
4. High-power, (AlGaIn)(AsSb) semiconductor disk laser at 20 μm
5. 2.7 W tunable orange-red GaInNAs semiconductor disk laser
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