Optimization of the gain chip for optically pumped semiconductor disk lasers

Abstract

Abstract Strain-compensated quantum wells (QWs) could greatly improve the performance of semiconductor disk lasers, such as improving the epitaxy quality of the semiconductor gain chip and obtaining a higher gain. To optimize the output characteristics of the semiconductor gain chip, the strain-compensated thickness, well depth, band energy, emission wavelength, and peak gain versus In and P compositions are investigated in detail. The results show that increasing the P composition of the strain-compensated layer will slightly reduce the emission wavelength, deepen the well depth, and increase the peak gain. But the P composition is not the higher the better. When designing a gain chip, it should have a pre-offset between the emission wavelength of the QWs at room temperature and the target wavelength of the laser at an intense pump, and the pre-offset values of the wavelength should be designed deliberately to guarantee the resonant periodic gain structure working normally when the temperature in the active region approaches the desired value. This theoretical investigation may provide guidance for optimizing the laser performance of semiconductor disk lasers and other QW lasers.