Characterization of excimer laser annealed polycrystalline Si1−xGex alloy thin films by x-ray diffraction and spectroscopic ellipsometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366670
Reference24 articles.
1. Si/GexSi/sub 1-x/ heterojunction bipolar transistors with the GexSi/sub 1-x/ base formed by Ge ion implantation in Si
2. Fabrication and doping of poly-SiGe using excimer-laser processing
3. Excimer laser crystallization and doping of source and drain regions in high quality amorphous silicon thin film transistors
4. Excimer Laser Induced Crystallization of Amorphous Silicon-Germanium Films
5. Formation of poly-Si1−xGex using excimer-laser processing
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1. Deposition of Microcrystalline Si1-xGexby RF Magnetron Sputtering on SiO2Substrates;Japanese Journal of Applied Physics;2009-04-20
2. Optimal Conditions for Micromachining $\hbox{Si}_{1 - { \rm x}}\hbox{Ge}_{\rm x}$ at 210 $^{\circ}\hbox{C}$;Journal of Microelectromechanical Systems;2007-06
3. Excimer laser induced crystallization of amorphous hydrogenated carbon–germanium films fabricated by plasma CVD;Surface and Coatings Technology;2005-10
4. Effect of excimer laser annealing on the structural properties of silicon germanium films;Journal of Materials Research;2004-12-01
5. Enhanced crystal nucleation in a-SiGe/SiO2 by ion-irradiation assisted annealing;Applied Surface Science;2004-03
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