Improvement in electrical properties of buried SiO2 layers by high‐temperature oxidation-Reference-Cited by-同舟云学术

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Improvement in electrical properties of buried SiO2 layers by high‐temperature oxidation

Published:1995-11-27 Issue:22 Volume:67 Page:3283-3285
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mrstik B. J.,McMarr P. J.,Hughes H. L.,Anc M. J.,Krull W. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.115221

Reference7 articles.

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thin Ion-Synthesized Silicate Layers in Silicon-On-Insulator Technology;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2022-10

2. Influence of Oxygen Partial Pressure on Thickness Change of Buried Oxide in Silicon-on-Insulator Structure during High-Temperature Oxidation Processes;Journal of The Electrochemical Society;2006

3. The formation of thick buried oxide layers using ion implantation from water plasma;Thin Solid Films;2005-01

4. Ionic synthesis of silica-based glasses: prospect, simulation and applied aspects;SPIE Proceedings;2004-05-28

5. Increased thickness of buried oxide layer of silicon on insulator in separation by implantation of oxygen with water plasma;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002

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