Author:
Rivas Cristian,Lake Roger,Frensley William R.,Klimeck Gerhard,Thompson Phillip E.,Hobart Karl D.,Rommel Sean L.,Berger Paul R.
Subject
General Physics and Astronomy
Reference45 articles.
1. Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes
2. S. L. Rommel, T. E. Dillon, P. R. Berger, R. Lake, P. E. Thompson, K. D. Hobart, A. C. Seabaugh, and D. S. Simons, in1998 IEDM Technical Digest(IEEE, New York, 1998), p. 1035.
3. Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities
4. Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy
5. High room temperature peak-to-valley current ratio in Si based Esaki diodes
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