Dopant redistribution in heavily doped silicon: Confirmation of the validity of the vacancy‐percolation model
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343476
Reference8 articles.
1. High concentration diffusion of P in Si : a percolation problem ?
2. Dopant diffusion in silicon: A consistent view involving nonequilibrium defects
3. Diffusion of ion‐implanted Sn and Sb in heavily dopedn‐type silicon
4. Scaling theory of percolation clusters
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4. Activation and deactivation of phosphorus in silicon-on-insulator substrates;Materials Science in Semiconductor Processing;2016-02
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