Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1493666
Reference17 articles.
1. Epitaxially grown AlN and its optical band gap
2. The optical absorption edge of single‐crystal AlN prepared by a close‐spaced vapor process
3. First-principles calculations of effective-mass parameters of AlN and GaN
4. Valence band splittings and band offsets of AlN, GaN, and InN
5. Growth, Doping and Characterization of AlxGa1−xN Thin Film Alloys on 6H-SiC(0001) Substrates
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