Effect of impurities on thermal stability of pseudomorphically strained Si:C layer
Author:
Funder
National Science Council Taiwan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3572339
Reference20 articles.
1. Large enhancement of boron solubility in silicon due to biaxial stress
2. Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors
3. Carbon Incorporation into Substitutional Silicon Site by Molecular Carbon Ion Implantation and Recrystallization Annealing as Stress Technique in n-Metal–Oxide–Semiconductor Field-Effect Transistor
4. The proximity of the strain induced effect to improve the electron mobility in a silicon-carbon source-drain structure of n-channel metal-oxide-semiconductor field-effect transistors
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1. Deactivation of Phosphorus by Carbon in Recrystallized Silicon;ECS Journal of Solid State Science and Technology;2019
2. Insights into the C Distribution in Si:C/Si:C:P and the Annealing Behavior of Si:C Layers;ECS Journal of Solid State Science and Technology;2019
3. Local Arrangement of Substitutional C Atoms and the Thermal Stability of Epitaxial Si:C(P) Grown by CVD;ECS Journal of Solid State Science and Technology;2017
4. Highly strained channel with low-resistivity carbon-doped source/drain formed by cascade C7Hximplantation followed by rapid solid-phase epitaxy and laser annealing for n-channel metal–oxide–semiconductor field-effect transistor;Japanese Journal of Applied Physics;2015-02-06
5. Revisiting the role of strain in solid-phase epitaxial regrowth of ion-implanted silicon;Applied Physics Express;2015-01-28
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