Between explosive crystallization and amorphous regrowth: Inhomogeneous solidification upon pulsed‐laser annealing of amorphous silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98142
Reference15 articles.
1. Pulsed laser melting of amorphous silicon layers
2. Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation
3. Evidence for a Self-Propagating Melt in Amorphous Silicon upon Pulsed-Laser Irradiation
4. Bulk nucleation and amorphous phase formation in highly undercooled molten silicon
5. Phase transformation and impurity redistribution during pulsed laser irradiation of amorphous silicon layers
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1. Impact of solidification dynamics on crystal properties of silicon molten by a nanosecond laser pulse;Applied Physics A;2018-02-16
2. Formation of High-Quality μm-Order-Thick Poly-Si Films on Glass-Substrates by Flash Lamp Annealing;Subsecond Annealing of Advanced Materials;2014
3. Structural characterization of wavelength-dependent Raman scattering and laser-induced crystallization of silicon thin films;Thin Solid Films;2013-09
4. Explosive crystallization of amorphous silicon films by flash lamp annealing;Journal of Applied Physics;2009-08-15
5. Evidence for surface initiated solidification in Ge films upon picosecond laser pulse irradiation;Journal of Applied Physics;2001-04
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