Characterization of silicon surface states at clean and copper contaminated condition via transient capacitance measurement-Reference-Cited by-同舟云学术

Characterization of silicon surface states at clean and copper contaminated condition via transient capacitance measurement

Published:2017-10-09 Issue:15 Volume:111 Page:152103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Song Lihui¹^ORCID,Xie Meng²,Yu Xuegong²,Yang Deren²

Affiliation:

1. College of Materials and Environmental Engineering, Hangzhou Dianzi University, No. 1, 2nd Street, Jianggan District, Hangzhou 310018, People's Republic of China.

2. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, No.38 Zheda Road, Hangzhou 310027, People's Republic of China

Funder

The Science Challenge Project

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5001117

Reference17 articles.

1. Lateral photovoltaic effect in p-type silicon induced by surface states

2. Reduced bulk and surface states densities in metal-induced crystallized polycrystalline silicon nanowires