Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal–insulator–semiconductor structures-Reference-Cited by-同舟云学术

Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal–insulator–semiconductor structures

Published:2016-02 Issue:2 Volume:42 Page:138-142
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Tikhov S. V.,Gorshkov O. N.,Koryazhkina M. N.,Antonov I. N.,Kasatkin A. P.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063785016020139.pdf

Reference15 articles.

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3. Charge-Coupled Devices and Systems, Ed. by M. J. Howes and D. V. Morgan (Wiley-Interscience, New York, 1979; Energoatomizdat, Moscow, 1991).

4. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).

5. S. Kundu, N. N. Halder, D. Biswas, et al., J. Appl. Phys. 112, 034514 (2012).

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