Up conversion of luminescence via deep centers in high purity GaAs and GaAlAs epitaxial layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95319
Reference4 articles.
1. Two-step excitation of photoluminescence in GaP
2. Chromium‐induced up conversion in GaP
3. Deep center EL2 and anti‐Stokes luminescence in semi‐insulating GaAs
4. A study of deep levels in GaAs by capacitance spectroscopy
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4. Upconversion of infrared photons to visible luminescence using InAs-based quantum structures;Physical Review B;2011-02-17
5. Upconversion electroluminescence in InAs quantum dot light-emitting diodes;Applied Physics Letters;2008-03-03
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