Upconversion of infrared photons to visible luminescence using InAs-based quantum structures
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.83.081309/fulltext
Reference20 articles.
1. High-Efficiency Energy Up-Conversion by an "Auger Fountain" at an InP-AIInas Type-II Heterojunction
2. Low-temperature anti-Stokes luminescence mediated by disorder in semiconductor quantum-well structures
3. Interface-induced conversion of infrared to visible light at semiconductor interfaces
4. Mechanisms of photoluminescence upconversion at the GaAs/(ordered) GaInP2 interface
5. Band alignment and photoluminescence up-conversionat the GaAs/(ordered)GaInP2heterojunction
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1. Structural investigation of the 2D to 3D transition in stacked submonolayer InAs nanostructures;AIP Advances;2021-07-01
2. Photoluminescence tuning of stacked submonolayer (SML) InAs nanostructures across the 2D to 3D transition;Applied Physics Letters;2021-05-03
3. Submonolayer stacking growth of In(Ga)As nanostructures for optoelectronic applications: an alternative for Stranski–Krastanov growth;Japanese Journal of Applied Physics;2021-04-01
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