Uniform large‐area high‐gain silicon avalanche radiation detectors from transmutation doped silicon-Reference-Cited by-同舟云学术

Uniform large‐area high‐gain silicon avalanche radiation detectors from transmutation doped silicon

Published:1977-01-15 Issue:2 Volume:30 Page:118-120
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gelezunas V. L.,Siebt W.,Huth G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.89288

Reference6 articles.

1. A NEW IONIZING RADIATION DETECTION CONCEPT WHICH EMPLOYS SEMICONDUCTOR AVALANCHE AMPLIFICATION AND THE TUNNEL DIODE ELEMENT

2. Response of the silicon avalanche detector in beta, gamma, X-ray and neutron dosimetry

3. Breakdown behavior of rectifiers and thyristors made from striation-free silicon

4. Silicon doping by nuclear transmutation

5. Large Area Reach-Through Avalanche Diodes for X-Ray Spectroscopy

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