Characterization of silicon implanted GaAs buffer layers grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336137
Reference31 articles.
1. Capless annealing of silicon implanted gallium arsenide
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5. Annealing of damage and redistribution of Cr in boron‐implanted Si3N4‐capped GaAs
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1. The effect of helium ion implantation on the relaxation of strained InGaAs thin films;Thin Solid Films;2012-01
2. Relationship between implantation damage and electrical activation in gallium arsenide implanted with Si+;Applied Physics Letters;1994-02-21
3. References;Thin Films by Chemical Vapour Deposition;1990
4. Deep Level Study of VPE Layers for GaAs FET Devices;Journal of The Electrochemical Society;1988-11-01
5. Indium-doped GaAs: A very dilute alloy system;Physical Review B;1988-03-15
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