Deep electron traps near the passivated interface of HgCdTe
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336304
Reference10 articles.
1. Generation‐recombination centers inp‐type Hg1−xCdxTe
2. Deep level studies of Hg1−xCdxTe. I: Narrow‐band‐gap space‐charge spectroscopy
3. Deep level studies of Hg1−xCdxTe. II: Correlation with photodiode performance
4. Evidence of stress‐mediated Hg migration in Hg1−xCdxTe
5. Theory of deep traps at semiconductor interfaces
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1. Investigation of trap levels in HgCdTe IR detectors through low frequency noise spectroscopy;Semiconductor Science and Technology;2016-01-26
2. A study of deep levels in CdHgTe by analyzing the tunneling current of photodiodes;Semiconductors;2004-09
3. Study of interface traps from transient photoconductive decay measurements in passivated HgCdTe;Journal of Electronic Materials;2001-02
4. Recombination and ionization in narrow gap semiconductors;Physics Reports;1995-06
5. Deep defects in narrow-gap semiconductors;Physical Review B;1994-11-15
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