Temperature dependence of photoluminescence on molecular-beam-epitaxy grown Ga2O3(Gd2O3)/GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124908
Reference17 articles.
1. Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide
2. Depletion mode GaAs metal–oxide–semiconductor field effect transistors with Ga[sub 2]O[sub 3](Gd[sub 2]O[sub 3]) as the gate oxide
3. GaAs MOSFET using MBE-grown Ga2O3 (Gd2O3) as gate oxide
4. Recombination velocity at oxide–GaAs interfaces fabricated by in situ molecular beam epitaxy
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3. Anomalous temperature dependence of photoluminescence from stoichiometric GD2O3−x film;Journal of Crystal Growth;2004-01
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