Depletion mode GaAs metal–oxide–semiconductor field effect transistors with Ga[sub 2]O[sub 3](Gd[sub 2]O[sub 3]) as the gate oxide
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Published:1998-05
Issue:3
Volume:16
Page:1398
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
32 articles.
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