First-principles study of point defects in LiGaO2-Reference-Cited by-同舟云学术

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First-principles study of point defects in LiGaO2

Published:2019-10-21 Issue:15 Volume:126 Page:155703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Boonchun Adisak¹²,Dabsamut Klichchupong¹²^ORCID,Lambrecht Walter R. L.³^ORCID

Affiliation:

1. Department of Physics, Faculty of Science, Kasetsart University, Bangkok 10900, Thailand

2. Thailand Center of Excellence in Physics, Commission on the Higher Education, Bangkok 10400, Thailand

3. Department of Physics, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, Ohio 44106-7079, USA

Funder

USA National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5126028

Reference26 articles.

1. MBE grown Ga2O3 and its power device applications

2. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

3. The crystal structure of LiGaO2

4. Single-crystal growth of LiGaO2 for a substrate of GaN thin films

5. Chemical alteration of the native oxide layer on LiGaO2(001) by exposure to hyperthermal atomic hydrogen

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1. Modulating the mechanical properties and valence band of LiGaO2 by forming the highly mismatched Li(Ga1−xBix)O2 alloys;Journal of Applied Physics;2024-08-15

2. Lattice-compatible piezoelectric modification for suppressing lattice oxygen evolution of Ni-rich cathode materials at high cut-off voltage;Energy Storage Materials;2024-08

3. Electrochemical Activation of LiGaO₂: Implications for Ga-Doped Garnet Solid Electrolytes in Li-Metal Batteries;ACS Applied Materials & Interfaces;2024-07-16

4. Native defects and their complexes in spinel LiGa5O8;Journal of Applied Physics;2024-06-17

5. Wet and dry etching of ultrawide bandgap LiGa5O8 and LiGaO2;Journal of Vacuum Science & Technology B;2024-04-09

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