Tailoring the electronic properties of GaxIn1−xP beyond simply varying alloy composition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3094918
Reference24 articles.
1. Correlation of Photoreflectance Spectra with Performance of GaInP/GaAs Heterojunction Bipolar Transistors
2. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells
3. 40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
4. Research challenges to ultra-efficient inorganic solid-state lighting
5. Interplay of alloying and ordering on the electronic structure ofGaxIn1−xPalloys
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1. Effect of hydride vapor phase epitaxy growth conditions on the degree of atomic ordering in GaInP;Journal of Applied Physics;2020-07-14
2. Control of CuPt ordering in GaInP grown by hydride vapor phase epitaxy;2020 47th IEEE Photovoltaic Specialists Conference (PVSC);2020-06-14
3. Direct bandgap photoluminescence from n-type indirect GaInP alloys;Photonics Research;2017-05-22
4. Ordering induced direct-indirect transformation in unstrained GaxIn1−xP for 0.76≤x≤0.78;Journal of Applied Physics;2009-12
5. CuPt ordering in high bandgap GaxIn1−xP alloys on relaxed GaAsP step grades;Journal of Applied Physics;2009-09-15
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