Proton irradiation effects on InGaAs/InAsSb mid-wave barrier infrared detectors-Reference-Cited by-同舟云学术

Proton irradiation effects on InGaAs/InAsSb mid-wave barrier infrared detectors

Published:2021-09-21 Issue:11 Volume:130 Page:114501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Carrasco Rigo A.¹²³^ORCID,George James¹²,Maestas Diana¹,Alsaad Zinah M.¹²,Garnham David¹²,Morath Christian P.¹^ORCID,Duran Joshua M.⁴,Ariyawansa Gamini⁴,Webster Preston T.¹^ORCID

Affiliation:

1. Air Force Research Laboratory, Space Vehicles Directorate, Kirtland AFB, New Mexico 87117, USA

2. A-Tech, LLC, a BlueHalo Company (ATA BlueHalo), 1300 Britt St. SE, Albuquerque, New Mexico 87123, USA

3. Department of Physics, New Mexico State University, P.O. Box 30001, Las Cruces, New Mexico 88003, USA

4. Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Ohio 45433, USA

Funder

Air Force Research Laboratory

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0064043

Reference24 articles.

1. Radiation Effects in Advanced Semiconductor Materials and Devices

2. Type-II superlattice photodetectors versus HgCdTe photodiodes

3. Influence of proton radiation on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices

4. Empirical trends of minority carrier recombination lifetime vs proton radiation for rad-hard IR detector materials

5. Radiation tolerance characterization of dual band InAs/GaSb type-II strain-layer superlattice pBp detectors using 63 MeV protons

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