Influence of proton radiation on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices-Reference-Cited by-同舟云学术

Influence of proton radiation on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices

Published:2016-06-27 Issue:26 Volume:108 Page:263504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Höglund L.¹,Ting D. Z.¹,Khoshakhlagh A.¹,Soibel A.¹,Fisher A.¹,Hill C. J.¹,Keo S.¹,Rafol S.¹,Gunapala S. D.¹

Affiliation:

1. Center for Infrared Photodetectors, California Institute of Technology, Jet Propulsion Laboratory, 4800 Oak Grove Drive, Pasadena, California 91109-8099, USA

Funder

Jet Propulsion Laboratory (JPL)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4954901

Reference9 articles.

1. Radiation effects on photonic imagers-a historical perspective

2. Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice

3. Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

4. Proton Irradiation Effects on the Performance of III-V-Based, Unipolar Barrier Infrared Detectors

5. Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures

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