Effects of a Bi4Ti3O12 buffer layer on SrBi2Ta2O9 thin films prepared by the metalorganic decomposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123229
Reference9 articles.
1. Characterization of SrBi2Ta2O9 ferroelectric thin films deposited at low temperatures by plasma-enhanced metalorganic chemical vapor deposition
2. Properties of SrBi2Ta2O9 ferroelectric thin films prepared by a modified metalorganic solution deposition technique
3. Preparation and ferroelectric properties of SrBi2Ta2O9 thin films
4. Texture control and interfacial structures of SrBi2Ta2O9 thin films on Pt
5. Structure control and characterization of SrBi2Ta2O9 thin films by a modified annealing method
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2. Effects of excess Bi on structure and electrical properties of BiFeO3 thin films deposited on indium tin oxide substrate using sol–gel method;Journal of Materials Science: Materials in Electronics;2015-09-02
3. Seeding Effect by Off-Stoichiometric SrBi[sub 2]Ta[sub 2x]O[sub 9] Thin Buffer Layer on the Properties of SrBi[sub 2]Ta[sub 2]O[sub 9] Thin Films;Journal of The Electrochemical Society;2010
4. STRUCTURE AND FERROELECTRIC PROPERTIES OF Bi0.95La0.05FeO3 FILM ON INDIUM TIN OXIDE (ITO)/GLASS SUBSTRATE;Surface Review and Letters;2009-08
5. Low-Temperature Fabrication and Enhanced Ferro- and Piezoelectric Properties of Bi3.7Nd0.3Ti3O12Films on Indium TinOxide/Glass Substrates;Journal of the American Ceramic Society;2009-07
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