Gallium nitride nanowire nonvolatile memory device
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2216488
Reference12 articles.
1. Room-temperature transistor based on a single carbon nanotube
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3. Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors
4. High-Mobility Nanotube Transistor Memory
5. Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect Transistors
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