Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth-Reference-Cited by-同舟云学术

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Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth

Published:2013-02-28 Issue:8 Volume:113 Page:083712
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Polyakov A. Y.,Jeon Dae-Woo,Lee In-Hwan,Smirnov N. B.,Govorkov A. V.,Kozhukhova E. A.,Yakimov E. B.

Funder

Russian Foundation for Basic Research

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4793630

Reference31 articles.

1. S. Nakamura, in GaN and Related Materials II, edited by S. J. Pearton (Gordon and Breach Science, New York, 1999), pp. 1–45.

2. GaN HEMT Technology

3. Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE

4. Growth of GaN crystals by Na flux LPE method

5. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

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