Electrical properties of heteroepitaxial grown tin‐doped indium oxide films-Reference-Cited by-同舟云学术

Electrical properties of heteroepitaxial grown tin‐doped indium oxide films

Author:

Taga Naoaki¹,Odaka Hidefumi¹,Shigesato Yuzo²,Yasui Itaru²,Kamei Masayuki³,Haynes T. E.⁴

Affiliation:

1. Research Center, Asahi Glass Co., Ltd., 1150 Hazawa‐cho, Kanagawa‐ku, Yokohama 221, Japan

2. Institute of Industrial Science, University of Tokyo, 7‐22‐1 Roppongi, Minato‐ku, Tokyo 106, Japan

3. Department of Materials Science and Technology, Science University of Tokyo, Noda, Chiba 278, Japan

4. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference36 articles.

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3. H. Koh, K. Sawada, M. Ohgawara, T. Kuwata, M. Akatsuka, and M. Matsuhiro, SID Tech. Dig. 19, 53 (1988).

4. H. Kobayashi, T. Ishida, Y. Nakato, and H. Tsubomura, J. Appl. Phys. 69, 1736 (1991).JAPIAU0021-8979

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