Characterization of effective masses in InGaAsN quantum well structures by computer simulations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2138379
Reference12 articles.
1. Chapter 3 The k •p Method
2. Characterization of effective masses in strained quantum-well laser structures
3. Nitride Semiconductors and Devices
4. Recent developments in metastable dilute-N III–V semiconductors
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1. Evaluation of Effective Mass in InGaAsN/GaAs Quantum Wells Using Transient Spectroscopy;Materials;2022-10-30
2. Analysis of linewidth enhancement factor for quantum well structures based on InGaAsN/GaAs material system;Journal of Applied Physics;2009-09-15
3. Broad gain spectra of single and multiple InGaAsN quantum well systems;physica status solidi (b);2009-06-12
4. InAsN/GaSb/InAsN ‘W’ quantum well laser for mid-infrared emission: from electronic structure to threshold current density calculations;Journal of Physics D: Applied Physics;2008-10-14
5. The effect of well coupling on effective masses in the InGaAsN material system;Journal of Physics: Condensed Matter;2007-06-20
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