Effect of graphene domains orientation on quasi van der Waals epitaxy of GaN-Reference-Cited by-同舟云学术

Effect of graphene domains orientation on quasi van der Waals epitaxy of GaN

Published:2021-11-14 Issue:18 Volume:130 Page:185304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Borisenko D. P.¹²^ORCID,Gusev A. S.¹^ORCID,Kargin N. I.¹,Dobrokhotov P. L.¹^ORCID,Timofeev A. A.¹,Labunov V. A.¹²^ORCID,Kovalchuk N. G.²^ORCID,Mikhalik M. M.²^ORCID,Komissarov I. V.¹²^ORCID

Affiliation:

1. Institute for Nanoengineering in Electronics, Spintronics and Photonics, National Research Nuclear University MEPhI, Moscow 115409, Russia

2. R&D Lab 4.6 “Integrated Micro- and Nanosystems”, Belarusian State University of Informatics and Radioelectronics, Minsk 220013, Belarus

Funder

Competitiveness program of NRNU MEPHI

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0058044

Reference48 articles.

1. Nobel Lecture: Fascinated journeys into blue light

2. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes

3. High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz

4. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

5. MOVPE growth of GaN on Si(111) substrates

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2. Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoret-ical Study;Applied Sciences;2022-11-13

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