Theoretical investigation of near gap electronic states of Si∕SiGe multiple quantum wells on (001)-Si or SiGe substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2179147
Reference21 articles.
1. Si/SiGe heterostructures: from material and physics to devices and circuits
2. High-mobility Si and Ge structures
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5. Si/SiGe heterostructure parameters for device simulations
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2. Growth Mechanisms of Inductively-Coupled Plasma Torch Synthesized Silicon Nanowires and their associated photoluminescence properties;Scientific Reports;2016-11-22
3. High-quality Ge/Si0.4Ge0.6multiple quantum wells for photonic applications: growth by reduced pressure chemical vapour deposition and structural characteristics;Journal of Physics D: Applied Physics;2011-01-17
4. Finite Cylinders of Si1 −xGexAlloy Under the Double-Punch Test and Effect on Three Valence-Bands;Mechanics of Advanced Materials and Structures;2009-06-19
5. Quantum-confined Stark effect inGe∕SiGequantum wells: A tight-binding description;Physical Review B;2008-04-09
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