Tunneling anisotropic magnetoresistance in fully epitaxial magnetic tunnel junctions with different barriers-Reference-Cited by-同舟云学术

Tunneling anisotropic magnetoresistance in fully epitaxial magnetic tunnel junctions with different barriers

Published:2018-06-11 Issue:24 Volume:112 Page:242404
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tao B. S.¹²³,Jiang L. N.²,Kong W. J.²,Chen W. Z.²,Yang B. S.²,Wang X.²,Wan C. H.²,Wei H. X.²,Hehn M.³,Lacour D.³,Lu Y.³^ORCID,Han X. F.²^ORCID

Affiliation:

1. Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China

2. Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China

3. Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP239, 54506 Vandoeuvre-lès-Nancy, France

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5027909

Reference35 articles.

1. Tunneling between ferromagnetic films

2. Giant magnetic tunneling effect in Fe/Al2O3/Fe junction

3. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions

4. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

5. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

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