Impact of Interfacial Disorder and Band Structure on the Resonant Conductance Oscillation in Quantum-Well-Based Magnetic Tunnel Junctions-Reference-Cited by-同舟云学术

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Impact of Interfacial Disorder and Band Structure on the Resonant Conductance Oscillation in Quantum-Well-Based Magnetic Tunnel Junctions

Published:2024-09-03 Issue: Volume: Page:
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Ma Tianyi¹²^ORCID,Tao Bingshan¹²,Devaux Xavier¹^ORCID,Yang Hongxin³^ORCID,Zuo Yalu¹,Migot Sylvie¹,Kurnosikov Oleg¹,Vergnat Michel¹,Han Xiufeng²^ORCID,Lu Yuan¹^ORCID

Affiliation:

1. Institut Jean Lamour, Université de Lorraine, CNRS, UMR 7198, 54011 Nancy, France

2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China

3. Center for Quantum Matter, School of Physics, Zhejiang University, Hangzhou 310058, China

Funder

Agence Nationale de la Recherche

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c01202

Reference32 articles.

1. Enhanced tunnel magnetoresistance in Fe/Mg₄Al-O_x/Fe(001) magnetic tunnel junctions

2. Realizing Room‐Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAl 2 O 4 Quasi‐Quantum Well Structures

3. Inverted spin polarization of Heusler alloys for spintronic devices

4. Spin Diode Based on Fe/MgO Double Tunnel Junction

5. Enhanced Tunnel Magnetoresistance due to Spin Dependent Quantum Well Resonance in Specific Symmetry States of an Ultrathin Ferromagnetic Electrode

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