Realizing Room‐Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAl 2 O 4 Quasi‐Quantum Well Structures-Reference-Cited by-同舟云学术

Realizing Room‐Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAl 2 O 4 Quasi‐Quantum Well Structures

Published:2019-08-10 Issue:20 Volume:6 Page:1901438
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Adv. Sci.

Author:

Xiang Qingyi¹²^ORCID,Sukegawa Hiroaki¹^ORCID,Belmoubarik Mohamed¹,Al‐Mahdawi Muftah¹,Scheike Thomas¹,Kasai Shinya¹,Miura Yoshio¹³⁴⁵,Mitani Seiji¹²

Affiliation:

1. Research Center for Magnetic and Spintronic MaterialsNational Institute for Materials Science (NIMS) Tsukuba 305‐0047 Japan

2. Graduate School of Pure and Applied SciencesUniversity of Tsukuba Tsukuba 305‐8577 Japan

3. Electrical Engineering and ElectronicsKyoto Institute of Technology Kyoto 606‐8585 Japan

4. Center for Materials Research by Information IntegrationNational Institute for Materials Science (NIMS) Tsukuba 305‐0047 Japan

5. Center for Spintronics Research Network (CSRN)Graduate School of Engineering ScienceOsaka University Osaka 560‐8531 Japan

Funder

Cabinet Office, Government of Japan

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.201901438

Reference38 articles.

1. Spintronics: A Spin-Based Electronics Vision for the Future

2. The emergence of spin electronics in data storage

3. Giant magnetoresistive in soft ferromagnetic multilayers

4. Spin-dependent tunneling conductance ofFe|MgO|Fesandwiches

5. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

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