Electron spin resonance study of GaAs:Er,O grown by organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1786669
Reference13 articles.
1. Selective formation of an efficient Er‐O luminescence center in GaAs by metalorganic chemical vapor deposition under an atmosphere containing oxygen
2. Atomic configuration of the Er‐O luminescence center in Er‐doped GaAs with oxygen codoping
3. EXAFS Measurement on Local Structure Around Erbium Atoms Doped in GaAs with Oxygen Co-Doping
4. Study of the Zeeman Effect of Er3+ in GaAs:Er,O
5. Electron spin resonance of Er–oxygen complexes in GaAs grown by metal organic chemical vapor deposition
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1. Electron spin resonance studies of GaAs:Er,O;Rare Earth and Transition Metal Doping of Semiconductor Materials;2016
2. Evaluation of the electronic states in highly Ce doped Si films grown by low temperature molecular beam epitaxy system;Journal of Crystal Growth;2015-09
3. Electron spin resonance study of Er-concentration effect in GaAs;Er,O containing charge carriers;Journal of Applied Physics;2014-05-21
4. Energy structure of Er-2O center in GaAs:Er,O studied by high magnetic field photoluminescence measurement;Journal of Luminescence;2011-11
5. Electron spin resonance study of photoluminescent material GaAs:Er,O-Er concentration effect;Journal of Applied Physics;2011-03
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