Energy structure of Er-2O center in GaAs:Er,O studied by high magnetic field photoluminescence measurement-Reference-Cited by-同舟云学术

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Energy structure of Er-2O center in GaAs:Er,O studied by high magnetic field photoluminescence measurement

Published:2011-11 Issue:11 Volume:131 Page:2294-2298
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Katsuno Hiroyasu,Ohta Hitoshi,Portugall Oliver,Ubrig Nicolas,Fujisawa Masashi,Elmasry Fatma,Okubo Susumu,Fujiwara Yasufumi

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference15 articles.

1. Erbium in silicon

2. Optical properties of a single type of optically active center inSi∕Si:Ernanostructures

3. Terahertz electromagnetic transitions observed within theI415/2ground multiplet ofEr3+ions in Si

4. Luminescence properties of Er,O-codoped III–V semiconductors grown by organometallic vapor phase epitaxy

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Estimations of the electron-phonon coupling parameters of the spectral lines in GaAs: Er3+ and Y3Al5O12:Yb3+;Optik;2021-10

2. Electron spin resonance studies of GaAs:Er,O;Rare Earth and Transition Metal Doping of Semiconductor Materials;2016

3. Electron spin resonance study of Er-concentration effect in GaAs;Er,O containing charge carriers;Journal of Applied Physics;2014-05-21

4. Crystal field splitting and effective g factor of infrared emission band in single crystal;Journal of Molecular Structure;2014-05

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