Investigation of tellurium−implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.321347
Reference12 articles.
1. Lattice location and dopant behavior of group II and VI elements implanted in silicon
2. Technique used in Hall effect analysis of ion implanted Si and Ge
3. Electrical Behavior of Group III and V Implanted Dopants in Silicon
4. Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor Surface
5. Electrical properties of indium implanted silicon
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1. Infrared absorption and sub-bandgap photo-response of hyperdoped silicon by ion implantation and ultrafast laser melting;Journal of Alloys and Compounds;2021-11
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3. Effect of Electrode Roughness on Electroforming inHfO2and Defect-Induced Moderation of Electric-Field Enhancement;Physical Review Applied;2015-12-29
4. Intermediate band conduction in femtosecond-laser hyperdoped silicon;Applied Physics Letters;2014-07-21
5. Contact-Resistance Reduction for Strained n-FinFETs With Silicon–Carbon Source/Drain and Platinum-Based Silicide Contacts Featuring Tellurium Implantation and Segregation;IEEE Transactions on Electron Devices;2011-11
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