Lattice location and dopant behavior of group II and VI elements implanted in silicon
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577108232560
Reference10 articles.
1. High-Dose Implantations of P, As, and Sb in Silicon: A Comparison of Room-Temperature Implantations Followed by a 550°C Anneal and Implantations Conducted at 600°C
2. Electrical Behavior of Group III and V Implanted Dopants in Silicon
3. Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling Technique
4. A gas-release study of the annealing of bombardment-induced disorder∗ (studies on bombardment-induced disorder—I)
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