Pulsed XeCl laser annealing of ZnS:Mn thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93066
Reference7 articles.
1. Luminescence of isoelectronic traps in laser-annealed, tellurium-coated zinc sulphide
2. The epitaxial growth of zinc sulphide on silicon by vacuum evaporation
3. The epitaxy of zinc sulphide on silicon
4. 60‐nsE‐beam excitation of rare‐gas halide lasers
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1. Pulsed laser annealing for high-efficiency thin film electroluminescent devices;Journal of Applied Physics;2000-08
2. The effects of multiple KrF laser irradiations on the electroluminescence and photoluminescence of rf-sputtered ZnS:Mn-based electroluminescent thin film devices;Applied Surface Science;2000-03
3. Ablation study on pulsed KrF laser annealed electroluminescent ZnS:Mn/Y2O3 multilayers deposited on Si;Applied Surface Science;2000-02
4. Laser processing for enhanced performance thin film electroluminescent devices;Electronics Letters;2000
5. The effects of KrF pulsed laser and thermal annealing on the crystallinity and surface morphology of radiofrequency magnetron sputtered ZnS:Mn thin films deposited on Si;Journal of Applied Physics;1999-09
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