Light‐current characteristics of InGaAsP light emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92753
Reference9 articles.
1. Radiance saturation in small-area GaInAsP/InP and GaAlAs/GaAs LED's
2. Nonradiative carrier loss and temperature sensitivity of threshold in 1.27 μm (GaIn)(AsP)/InP d.h. lasers
3. Temperature dependence of threshold of InGaAsP/InP double‐heterostructure lasers and Auger recombination
4. Temperature Sensitive Threshold Current of InGaAsP–InP Double Heterostructure Lasers
5. Temperature dependence of InGaAsP double-heterostructure laser characteristics
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1. Properties of InGaN/AlInGaN/AlGaN quantum-well UV light-emitting diodes;SPIE Proceedings;2003-07-23
2. Temperature dependence of long wavelength semiconductor lasers;Applied Physics Letters;1992-03-02
3. Characterization and Design of Semiconductor Lasers Using Strain;Band Structure Engineering in Semiconductor Microstructures;1989
4. On the effects of Auger recombination and energetic carrier leakage in GaInAsP/InP light emitting diodes;Journal of Applied Physics;1988-08-15
5. Compositional dependence of the Auger coefficient for InGaAsP lattice matched to InP;Journal of Applied Physics;1985-10
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