Study of Au‐n‐type GaAs Schottky contacts on a single‐crystal part of large‐grained polycrystalline GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336997
Reference11 articles.
1. Electrical properties of polycrystalline GaAs films
2. Electron tunneling through GaAs grain boundaries
3. Electrical characterization of grain boundaries in GaAs
4. Transition with grain size from electrode‐limited to bulk‐limited conduction in polycrystalline semiconductors
5. Hydrogen passivation of grain boundaries in polycrystalline gallium arsenide
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical modelling of Ion- Damaged GaAs schottky barrier interfaces;Journal of Electronic Materials;1989-07
2. Capacitance Spectroscopy of Schottky Diodes Formed on Ion-Etched GaAs;MRS Proceedings;1988
3. Electrical Modelling of Ion-Damaged GaAs Schottky Barrier Interfaces;MRS Proceedings;1988-01
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