Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4871090
Reference14 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. Light-Emitting Diodes
3. Strain-induced polarization in wurtzite III-nitride semipolar layers
4. Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer
5. Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers
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