Real-time observation of the interface between SiC and a liquid alloy and its application to the dissolution behavior of SiC at 1573 K
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4837575
Reference27 articles.
1. Micropipe healing in SiC wafers by liquid-phase epitaxy in Si–Ge melts
2. On the growth of 4H–SiC by low-temperature liquid phase epitaxy in Al rich Al–Si melts
3. Solution Growth of Single Crystalline 6H-SiC from Si-Ti-C Ternary Solution
4. Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique
5. Solution growth of single crystalline 6H, 4H-SiC using Si–Ti–C melt
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